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Samsung unveiled its first 512GB DDR5 memory module

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Samsung unveiled its first 512GB DDR5 memory module based on the new High-K Metal Gate (HKMG) process.

DDR5, the new standard in DRAM (Dynamic Random Access Memory), is geared to the demands of high-bandwidth workloads with great demand for supercomputing computing, artificial intelligence (AI) and machine learning (ML), as well such as data analysis applications.

As a successor to the popular DDR4, DDR5 promises to double performance by up to 7,200 megabits per second (Mbps), which is good enough to process two 30 GB ultra-high definition movies in one second – with the new HKMG solution helping to reduce energy leakage.

DDR memory can send and receive data signals twice during a single clock cycle and allows for much faster transfer rates and higher capacities.

Samsung unveiled its first 512GB DDR5 memory module

HKMG technology

HKMG technology is traditionally used in logic semiconductors, where it takes advantage of a high dielectric material in the insulation layer to reduce current leakage.

In DRAM structures, this insulation layer is thinner, which generally results in a higher leakage current. But with its new DDR5, Samsung has now replaced the insulator with HKMG material to not only reduce leakage, but also use less energy – making it ideal for data centers where energy efficiency is becoming more and more critical.

The HKMG process was adopted in Samsung’s GDDR6 memory in 2018 for the first time in the industry, before it is now expanded to DDR5 memory. Samsung said it also applied the technology via silicon via (TSV) to the latest DDR5 memory to stack eight layers of 16 gigabit DRAM chips to the industry’s maximum capacity of 512 GB.

In addition to the 512 GB module, Samsung is currently testing different variations of its family of DDR5 memory products for customers for verification and certification – which includes partners like Intel.

Samsung’s DDR5 also features an Error Correction Code (ECC) circuit to increase reliability, with hardware expected to assist in powering the computers needed for, among others, medical research, financial markets, autonomous driving and smart cities.

Samsung’s HKMG-based 512 GB DDR5 memory is still under verification, but will likely be available on the market in the second half of 2021.


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